2010

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Highly polarized Raman scattering anisotropy in single GaN nanowires
Applied physics letters 96(9), 091907 - () [10.1063/1.3343347] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots
Applied physics letters 96(22), 222107 - () [10.1063/1.3442508] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires
Nanotechnology 21(31), 315702 - () [10.1088/0957-4484/21/31/315702]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Raman scattering on intrinsic surface electron accumulation of InN nanowires
Applied physics letters 97(9), 093104 - () [10.1063/1.3483758] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
Solid state electronics 54(9), 877 - 882 () [10.1016/j.sse.2010.04.013]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates
Semiconductor science and technology 25(7), 075001 () [10.1088/0268-1242/25/7/075001]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Quantum transport in narrow-gap semiconductor nanocolumns
Physica status solidi / C 7, 386 - 389 () [10.1002/pssc.200982506] BibTeX | EndNote: XML, Text | RIS

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Two-Dimensional Optical Control of Electron Spin Orientation by Linearly Polarized Light in InGaAs
Physical review letters 105, 246603 () [10.1103/PhysRevLett.105.246603] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Elastic strain and dopant activation in ion implanted strained Si nanowires
Journal of applied physics 108, 124908 () [10.1063/1.3520665] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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FEM enhanced signal processing approach for pattern recognition in the SQUID based NDE system
Journal of physics / Conference Series 234, 042030 () [10.1088/1742-6596/234/4/042030] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Charge Carrier Induced Increase of the Curie Temperature of EuO - Is there an Instrinsic Limit?
Physical review letters 105, 257206 () [10.1103/PhysRevLett.105.257206] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN
Applied physics letters 97, 173505 () [10.1063/1.3507885] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Universal conductance fluctuations and localization effects in InN nanowires connected in parallel
Journal of applied physics 108, 113704 () [10.1063/1.3516216] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Spin-orbit coupling and phase coherence in InAs nanowires
Physical review / B 82(23), 235303 () [10.1103/PhysRevB.82.235303] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Titania-assisted electron-beam and synchrotron lithography
Nanotechnology 21, 315301 () [10.1088/0957-4484/21/31/315301] BibTeX | EndNote: XML, Text | RIS

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Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction
Ultramicroscopy 110, 1255 - 1266 () [10.1016/j.ultramic.2010.05.003] BibTeX | EndNote: XML, Text | RIS

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Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots
... Journal of physics / Conference Series 245, 012034 () [10.1088/1742-6596/245/1/012034] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility
IEEE Electron Device Letters 31, 1083 - 1085 () [10.1109/LED.2010.2058995] BibTeX | EndNote: XML, Text | RIS

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Ferroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy
Applied physics letters 97, 142901 () [10.1063/1.3499273] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Strain tensors in layer systems by precision ion channeling measurements
Journal of applied physics 107, 124906 () [10.1063/1.3415530] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
Applied physics letters 96, 022904 () [10.1063/1.3292217] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
Solid state electronics 54, 185 - 190 () [10.1016/j.sse.2009.12.017] BibTeX | EndNote: XML, Text | RIS

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Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
Nanotechnology 21, 105701 () [10.1088/0957-4484/21/10/105701] BibTeX | EndNote: XML, Text | RIS

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Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
IEEE Electron Device Letters 31, 537 - 539 () [10.1109/LED.2010.2045220] BibTeX | EndNote: XML, Text | RIS

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Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon
IEEE Electron Device Letters 31, 350 - 352 () [10.1109/LED.2010.2041028] BibTeX | EndNote: XML, Text | RIS

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A strong ferroelectric ferromagnet created by means of spin-lattice coupling
Nature <London> 466, 954 - 958 () [10.1038/nature09331] BibTeX | EndNote: XML, Text | RIS

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Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
Applied physics / A 100, 305 - 308 () [10.1007/s00339-010-5804-z] BibTeX | EndNote: XML, Text | RIS

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LaLuO3 as high-k gate dielectric for InAs nanowire structures
Semiconductor science and technology 25, 085001 () [10.1088/0268-1242/25/8/085001] BibTeX | EndNote: XML, Text | RIS

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Electric field tuning of hard polar phonons in strained SrTiO3 films
Journal of applied physics 107, 124116 () [10.1063/1.3447812] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size
Journal of materials chemistry 20, 4207 - 4212 () [10.1039/c0jm00363h] BibTeX | EndNote: XML, Text | RIS

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An Efficient Finite-Element Approach for the Modeling of Planar Double-D Excitation Coils and Flaws in SQUID NDE Systems
IEEE transactions on applied superconductivity 20, 76 - 81 () [10.1109/TASC.2009.2039399] BibTeX | EndNote: XML, Text | RIS

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Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy
Applied physics letters 96, 262905 () [10.1063/1.3457786] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
Japanese journal of applied physics 49, 046504 () [10.1143/JJAP.49.046504] BibTeX | EndNote: XML, Text | RIS

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Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH
Journal of the Electrochemical Society 157, H643 - H646 () [10.1149/1.3382944] BibTeX | EndNote: XML, Text | RIS

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pH-sensitive properties of barium strontium titanate (BST) thin films prepared by pulsed laser deposition technique
Physica status solidi / A 207, 824 - 830 () [10.1002/pssa.200983310] BibTeX | EndNote: XML, Text | RIS

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Self-Organized Si-Nanotransistors
Japanese journal of applied physics 49, 04DJ02 () [10.1143/JJAP.49.04DJ02] BibTeX | EndNote: XML, Text | RIS

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Simultaneous detection of cyanide and heavy metals for environmental analysis by means of µISEs
Physica status solidi / A 207, 817 - 823 () [10.1002/pssa.200983303] BibTeX | EndNote: XML, Text | RIS

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Josephson supercurrent in Nb/InN-nanowire/Nb junctions
Applied physics letters 96, 132504 () [10.1063/1.3377897] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors
Applied physics letters 96, 013513 () [10.1063/1.3275731] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings
Electrochemical and solid-state letters 13, G37 - G39 () [10.1149/1.3322517] BibTeX | EndNote: XML, Text | RIS

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Molecular properties of liquid crystals in the terahertz frequency range
Optics express 18, 6097 - 6107 () [10.1364/OE.18.006097] BibTeX | EndNote: XML, Text | RIS

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RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um
IEEE Electron Device Letters 31, 180 - 182 () [10.1109/LED.2009.2038078] BibTeX | EndNote: XML, Text | RIS

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Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases
Physica / E 42, 1130 - 1133 () [10.1016/j.physe.2009.11.039] BibTeX | EndNote: XML, Text | RIS

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Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
Journal of applied physics 107, 044510-6 () [10.1063/1.3284089] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
Thin solid films 518, 2565 - 2568 () [10.1016/j.tsf.2009.09.155] BibTeX | EndNote: XML, Text | RIS

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Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24
Journal of applied physics 107, 024106 () [10.1063/1.3273388] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires
Journal of crystal growth 312, 635 - 640 () [10.1016/j.jcrysgro.2009.11.026] BibTeX | EndNote: XML, Text | RIS

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Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances
Applied physics letters 96, 023110 () [10.1063/1.3290984] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD
Vacuum 84, 170-173 () [10.1016/j.vacuum.2009.05.017] BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 20.05.2022